symbol 10 sec steady state v ds v gs -6.5 -4.7 -5.3 -3.7 i dm 3.1 1.6 2.0 1.0 t j , t stg parameter symbol ty p max t 10s 34 40 steady state 66 80 steady state r jl 20 25 pulsed drain current b power dissipation a t a =25c junction and storage temperature range t a =70c continuous drain current a units parameter t a =25c t a =70c v v a i d gate-source voltage drain-source voltage -30 absolute maximum ratings t a =25c unless otherwise noted p d maximum junction-to-lead c c/w thermal characteristics units maximum junction-to-ambient a c/w maximum junction-to-ambient a c/w r ja c -55 to 150 w 20 -25 g d d d s d d d AON4413 features v ds (v) = -30v i d = -6.5a (v gs = -10v) r ds(on) < 46m ? (v gs = -10v) r ds(on) < 60m ? (v gs = -6v) the AON4413 uses advanced trench technology to provide excellent r ds(on) with low gate charge. this device is suitable for use as a load switch or in pwm applications. standard product AON4413 is pb-free (meets rohs & sony 259 specifications). g d s dfn 3x2 p-channel enhancement mode field general description effect transistor www.freescale.net.cn 1 / 4
symbol min typ max units bv dss -30 v -1 t j = 55c -5 i gss 100 na v gs(th) -1.5 -2 -2.5 v i d(on) -25 a 38 46 t j =125c 54 65 48 60 m ? g fs 11 s v sd 0.77 -1 v i s -3 a c iss 668 830 pf c oss 126 pf c rss 92 pf r g 69 ? q g (10v) 12.7 17 nc q g (4.5v) 6.4 8.5 nc q gs 2nc q gd 4nc t d(on) 7.7 ns t r 6.8 ns t d(off) 20 ns t f 10 ns t rr 22 30 ns q rr 15 nc body diode reverse recovery time body diode reverse recovery charge i f =-6.5a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d = -250 a, v gs = 0v v gs = -10v, v ds = -5v v gs = -10v, i d = -6.5a reverse transfer capacitance i f =-6.5a, di/dt=100a/ s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds = v gs i d = -250 a v ds = -30v, v gs = 0v v ds = 0v, v gs = 20v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m ? v gs = -6v, i d = -5.3a i s = -1a,v gs = 0v v ds = -5v, i d = -6.5a switching parameters total gate charge (4.5v) gate source charge gate drain charge total gate charge (10v) v gs =-10v, v ds =-15v, i d =-6.5a turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =2.3 ? , r gen =3 ? turn-off fall time turn-on delaytime dynamic parameters maximum body-diode continuous current gate resistance v gs =0v, v ds =0v, f=1mhz v gs =0v, v ds =-15v, f=1mhz input capacitance output capacitance a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a = 25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using < 300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev1: june 2007 AON4413 p-channel enhancement mode field effect transistor www.freescale.net.cn 2 / 4
typical electrical and thermal characteristics i f =-6.5a, di/dt=100a/ s this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 5 10 15 20 25 012345 -v ds (volts) figure 1: on-region characteristics -i d (a) -4v -4.5v -10v -3.5v 0 2 4 6 8 10 012345 -v gs (volts) figure 2: transfer characteristics -i d (a) 25c 125c v ds =-5v -40c 20 40 60 80 0246810 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =-10v v gs =-6v 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c -40c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance 20 40 60 80 100 120 140 160 246810 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) i d =-6.5a 25 c 125c -40 c v gs =-2.5v -6v v gs =-10v i d =-6.5a v gs =-6v i d =-5.3a -5v AON4413 p-channel enhancement mode field effect transistor www.freescale.net.cn 3 / 4
typical electrical and thermal characteristics i f =-6.5a, di/dt=100a/ s this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 2 4 6 8 10 03691215 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 1 10 100 1000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction-t o ambient (note e) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance(note e) z ja normalized transient thermal resistance 0.01 0.1 1 10 100 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 100mss 10s dc r ds(on) limited t j(max) =150c t a =25c 10 s v ds =-15v i d =-6.5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =66c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c AON4413 p-channel enhancement mode field effect transistor www.freescale.net.cn 4 / 4
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